TransAudio ECX FET amplifier G5 MOS version

Development process of G5 MOS version

We have been researching and debugging the later stage of the Gaowen line

Over the years, it has been continuously refined, improved, and evolved to this day

January 2026

G5 uses 4 pairs of British ECX field tubes

Line characteristics

Refer to the sky high priced machine high text route

Having ultra-high resolution and a warm intermediate frequency

Design materials

All new components

Latest TI Li Sheng Field Management Input

Precision CNC machining of all aluminum chassis

500W Nippon Steel Core Transformer

8 VishayBC fever grade audio filter electrolysis

Design with completely independent left and right channels

The amplification board, power board, and protection board are completely separated from each other on both sides

4 pairs of precision paired 1% UK ECX fever field tube 10N20/10P20

Gaowen Original Machine adopts

Comprehensive speaker protection effectively protects your expensive speaker

Power on/off soft start protection

Specifications

Input sensitivity: 1.2Vrms

Input impedance: 47K ohms

Damping coefficient: 500

Output power: 150W * 2/8 ohms, 200W * 2/4 ohms

RMS power, long-term stable output at full power

Static power consumption: 80W, 100mA per tube

Supply voltage: AC110V or AC220V

Chassis color: all silver or all black

Whole machine weight: 12kg with packaging weight: 15kg

Overall dimensions: 430 * 350 * 100mm Packaging dimensions: 530 * 40 * 200mm

AP assisted design and testing parameters

The G5MOS version has extremely excellent parameters

Output effective value: 32.4Vrms

Channel gain: 29.6dB0.3 times

Residual noise: 23.16uV is very low

Signal to noise ratio: 121.5dB

Dynamic range: 121.6dB

THD distortion: 0.00064%

THD+N distortion: 0.0020%

Frequency response bandwidth:+0.054dB

Channel crosstalk: -110dB dual mono structure, excellent data